发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING ACTIVE MATRIX DEVICE INCLUDING TOP GATE TYPE TFT |
摘要 |
A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.
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申请公布号 |
US2008230007(A1) |
申请公布日期 |
2008.09.25 |
申请号 |
US20070940113 |
申请日期 |
2007.11.14 |
申请人 |
TSUJIMURA TAKATOSHI;TOKUHIRO OSAMU;MOROOKA MITSUO;MIYAMOTO TAKASHI |
发明人 |
TSUJIMURA TAKATOSHI;TOKUHIRO OSAMU;MOROOKA MITSUO;MIYAMOTO TAKASHI |
分类号 |
C23C16/00;G02F1/136;C23C16/44;G02F1/1368;G09F9/00;H01L21/00;H01L21/205;H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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