发明名称 |
Atomic Layer Deposition Method and Semiconductor Device Formed by the Same |
摘要 |
There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within a ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; forming a first dielectric layer to cover the discrete compound monolayer; forming a second third monolayer above first dielectric layer; and forming a second discrete compound monolayer; and forming a second dielectric layer to cover the second discrete compound monolayer above the first dielectric layer. There is also provided a semiconductor device formed by the ALD method.
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申请公布号 |
US2008315292(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080141040 |
申请日期 |
2008.06.17 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
JI HUA;CHI MIN-HWA;MIENO FUMITAKE;ZHANG SEANFUXIONG |
分类号 |
H01L21/28;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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