发明名称 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
摘要 The present invention relates to a polymer comprising at least one selected from the group consisting of a repeating unit having a backbone to which an acid generator is bound, a carboxyl-containing repeating unit that may be substituted with an acid-liable group, and a hydroxyl-containing repeating unit, and is obtained by polymerizing monomers imparting the repeating units under the lighting having a dose of light with a wavelength of 400 nm or less of 0.05 mW/cm^2 or less. The polymer according to the present invention causes no photolysis of an acid generator during polymerization, generates no deprotection of an acid-liable group in the case of a polymer for a positive type resist material, shows a high dissolution contrast, and provides a pattern with high spheroidicity after development. In addition, it is possible to inhibit agglomeration of polymer in a resist material, thereby inhibiting generation of particles.
申请公布号 KR20160070702(A) 申请公布日期 2016.06.20
申请号 KR20150174871 申请日期 2015.12.09
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;FUNATSU KENJI;ADACHI TEPPEI
分类号 C08F220/10;G03F7/038;G03F7/039 主分类号 C08F220/10
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