| 摘要 |
Provided is a nonpolar or semipolar GaN substrate having a diameter of 2 inches (about 5 cm) or more which does not have portions in which crystallinity is significantly reduced at end parts in the direction orthogonal to the c axis. The disk-shaped GaN substrate having a diameter of 2 inches (about 5 cm) or more comprises a front surface which has, with respect to a (0001) plane, an angle of inclination of 45° to 135° and a direction of inclination that is a direction in a range of ±5° centered in the <10-10> direction, and a rear surface which is a main surface on the opposite side from the front surface. The disk-shaped GaN substrate has on a side surface thereof a first point which is positioned in a direction orthogonal to the c axis when seen from the center of the GaN substrate. A single diffraction peak appears in the X-ray diffraction pattern obtained when an X-ray beam (CuKα1: wavelength 0.1542 nm) is incident on the first point and θ-scanning is performed by changing the incident angle θ of the incident X-ray beam while fixing the 2θ-angle of the diffracted X-ray beam at double the Bragg angle 28.99° of the {11-20} plane. |
