FIELD EFFECT TRANSISTOR

摘要

This field effect transistor is provided with: a nitride semiconductor layer that includes a heterojunction; a source electrode (5) and drain electrode (6) that are disposed, with a space therebetween, on the nitride semiconductor layer; a first gate electrode (7) that is positioned between the source electrode (5) and the drain electrode (6) and operates in a normally on state; and a second gate electrode (9) that is positioned between the first gate electrode (7) and the source electrode (5) and operates in a normally off state. The first gate electrode (7) is disposed so as to surround the drain electrode (6) when seen in plan view, and the second gate electrode (9) is disposed so as to surround the source electrode (5) when seen in plan view.