Method and system for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass

摘要

Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of interconnected metal fingers comprising a first terminal of a second capacitor, and a third set of interconnected metal fingers comprising a common node that surrounds the first and second sets of interconnected metal fingers. The common node may comprise a second terminal of the capacitors. A repeating pattern of fingers may be: (third set/second set/third set/first set . . . ). The repeating pattern of metal fingers may be arranged in two parallel rows to mitigate variations in the semiconductor die. The interconnected metal fingers may comprise first and second metal layers formed on the semiconductor die.

主权项

1. A semiconductor device, the device comprising:
repeating triplet capacitors integrated on a semiconductor die, the repeating triplet capacitors comprising:
a first set of interconnected metal fingers comprising a first terminal of a first capacitor;a second set of interconnected metal fingers comprising a first terminal of a second capacitor; anda third set of interconnected metal fingers comprising a common node that surrounds each finger of the first and second sets of interconnected metal fingers and comprises a second terminal of both the first and second capacitors.