P-CONTACT WITH MORE UNIFORM INJECTION AND LOWER OPTICAL LOSS

摘要

The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.

主权项

1. A light emitting device comprising:
an n-layer, a p-layer, a light emitting layer between the n-layer and the p-layer, an n-pad for coupling to the n-layer, a p-pad for coupling to the p-layer, and a p-contact that couples the p-pad to the p-layer to facilitate current injection through the p-layer, wherein the p-contact is configured to inhibit current injection through the player in at least one current-inhibiting region of the p-contact, and the at least one current-inhibiting region includes an ion-injected region of the p-contact.