| 发明名称 |
Semiconductor Device Comprising a Bipolar Transistor |
| 摘要 |
A semiconductor device comprising a bipolar transistor and a method of making the same. The bipolar transistor includes a collector having a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a reduced surface field (RESURF) gate located above an upper surface of the laterally extending drift region for shaping an electric field within the collector. The bipolar transistor further includes a gap located between the reduced surface field gate and an extrinsic region of the base of the device, for electrically isolating the reduced surface field gate from the base. A lateral dimension Lgap of the gap is in the range 0.1 μm≦Lgap≦1.0 μm. |
| 申请公布号 |
US2016197168(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201614988441 |
申请日期 |
2016.01.05 |
| 申请人 |
Ampleon Netherlands B.V. |
发明人 |
Magnee Petrus Hubertus Cornelis;Melai Joost;Dinh Viet Thanh;Vanhoucke Tony |
| 分类号 |
H01L29/737;H03F3/21;H01L29/08;H01L29/10;H01L29/66;H01L29/40 |
主分类号 |
H01L29/737 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising a bipolar transistor, the bipolar transistor comprising:
a collector having a laterally extending drift region; a base located above the collector; an emitter located above the base; a reduced surface field (RESURF) gate located above an upper surface of the laterally extending drift region for shaping an electric field within the collector; and a gap located between the reduced surface field gate and an extrinsic region of the base of the device, for electrically isolating the reduced surface field gate from the base, wherein a lateral dimension Lgap of the gap is in the range 0.1 μm≦Lgap≦1.0 μm. |
| 地址 |
Eindhoven NL |
