发明名称 INTEGRATED PHOTONICS INCLUDING GERMANIUM
摘要 A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
申请公布号 US2016197111(A1) 申请公布日期 2016.07.07
申请号 US201614987693 申请日期 2016.01.04
申请人 The Research Foundation for the State University of New York 发明人 Coolbaugh Douglas;Adam Thomas;Leake Gerald L.
分类号 H01L27/146;H01L31/028 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of fabricating a photodetector structure comprising: forming dielectric material over silicon; etching a trench in the dielectric material extending to the silicon; epitaxially growing germanium within the trench; annealing germanium formed by the epitaxially growing; repeating the epitaxially growing and the annealing until the germanium overfills the trench; planarizing an overfill portion of the germanium; and creating top and bottom contacts using doping and metallization.
地址 Albany NY US