MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.

主权项

1. A manufacturing method of a semiconductor device, comprising the steps of:
(a) removing a natural oxide film from a surface of an electrode pad on a semiconductor chip; (b) after the step (a), forming a conductive pad-cover film over the surface of the electrode pad exposed by removing the natural oxide film; and (c) after the step (b), connecting a wire to the conductive pad-cover film, wherein the step (c) includes braking the conductive pad-cover film and forming an alloy layer at the interface between the wire and the electrode pad to connect the wire with the electrode pad.