发明名称 THREE-DIMENSIONAL INTEGRATED STRUCTURE COMPRISING AN ANTENNA CROSS REFERENCE TO RELATED APPLICATIONS
摘要 A three-dimensional integrated structure includes a support element, an interface device connected to the support element by a first electrically conductive connection, and an integrated circuit arranged between the support element and the interface device and connected to the interface device by a second electrically conductive connection. A filler region is positioned between the second electrically conductive connection and between the interface device and the integrated circuit. An antenna is distributed over the interface device and the integrated circuit and has a radiating element electromagnetically coupled with an excitation element through the interconnection of a slot.
申请公布号 US2016197048(A1) 申请公布日期 2016.07.07
申请号 US201615070046 申请日期 2016.03.15
申请人 STMicroelectronics SA ;Commissariat A L'Energie Atomique et aux Energies Alternatives 发明人 Bar Pierre;Dussopt Laurent;Carpentier Jean-Francois
分类号 H01L23/66;H01Q19/10;H01L23/528;H04B1/3827;H01L23/31;H01L23/00;H01L23/498;H01Q13/10;H01L23/522 主分类号 H01L23/66
代理机构 代理人
主权项 1. An apparatus, comprising: a support element, an interface device connected to the support element by first electrically conductive connection means, the interface device comprising a first semiconductor substrate and a first interconnection part including a plurality of metallization levels, an integrated circuit arranged between the support element and the interface device and connected to the interface device by second electrically conductive connection means, the integrated circuit comprising a second semiconductor substrate and a second interconnection part including a plurality of metallization levels, an adhesive material filler region between the second electrically conductive connection means and between and in contact with both the first interconnection part of the interface device and the second interconnection part of the integrated circuit, and an antenna, having an earth plane equipped with an aperture and located within the plurality of metallization levels of the first interconnection part, a radiating element separated from the earth plane by the first semiconductor substrate, and an excitation element located within the plurality of metallization levels of the second interconnection part and separated from the earth plane by the adhesive material filler region, wherein the aperture is configured to permit electromagnetic coupling between the excitation element and the radiating element.
地址 Montrouge FR