发明名称 FAST EXIT FROM DRAM SELF-REFRESH
摘要 Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.
申请公布号 US2016196866(A1) 申请公布日期 2016.07.07
申请号 US201615068925 申请日期 2016.03.14
申请人 INTEL CORPORATION 发明人 Bains Kuljit S
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人
主权项 1. A system comprising: a dynamic random access memory (DRAM) device to execute a self-refresh mode comprising a plurality of commands, each command to refresh rows of the DRAM device; and a memory controller operatively coupled to the DRAM device to send a signal to the DRAM device; the DRAM device, in response to receiving the signal from the memory controller, to further abort the self-refresh mode.
地址 Santa Clara CA US