发明名称 |
FAST EXIT FROM DRAM SELF-REFRESH |
摘要 |
Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller. |
申请公布号 |
US2016196866(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201615068925 |
申请日期 |
2016.03.14 |
申请人 |
INTEL CORPORATION |
发明人 |
Bains Kuljit S |
分类号 |
G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
1. A system comprising:
a dynamic random access memory (DRAM) device to execute a self-refresh mode comprising a plurality of commands, each command to refresh rows of the DRAM device; and a memory controller operatively coupled to the DRAM device to send a signal to the DRAM device; the DRAM device, in response to receiving the signal from the memory controller, to further abort the self-refresh mode. |
地址 |
Santa Clara CA US |