| 发明名称 | Semiconductor light-receiving device | ||
| 摘要 | A semiconductor light-receiving device includes: a substrate; a p-type conductive layer, a light absorption layer having a smaller bandgap than that of incident light, a multiplication layer producing avalanche multiplication, and an n-type window layer laminated in that order on the substrate; an n-type conductive layer in a region of part of the n-type window layer; and a first p-type conductive region in a region of the n-type window layer that is not in contact with the n-type conductive layer, wherein the first p-type conductive region does not reach the multiplication layer and is not in contact with any electrode to which power is supplied from outside. | ||
| 申请公布号 | US9406830(B1) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514928485 | 申请日期 | 2015.10.30 |
| 申请人 | MITSUBISHI ELECTRIC CORPORATION | 发明人 | Takemura Ryota;Nakaji Masaharu;Yamaji Kazuki |
| 分类号 | H01L31/10;H01L31/00;H01L31/107;H01L31/0352 | 主分类号 | H01L31/10 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A semiconductor light-receiving device comprising: a substrate; a p-type conductive layer, a light absorption layer having a smaller bandgap than that of incident light, a multiplication layer producing avalanche multiplication, and an n-type window layer laminated in that order on the substrate; an n-type conductive layer in a region of part of the n-type window layer; and a first p-type conductive region in a region of the n-type window layer that is not in contact with the n-type conductive layer, wherein the first p-type conductive region does not reach the multiplication layer and is not in contact with any electrode to which power is supplied from outside. | ||
| 地址 | Tokyo JP | ||