| 发明名称 | Semiconductor memory device | ||
| 摘要 | A semiconductor memory device includes a cell string including dummy memory cells and a plurality of memory cells in which n bit data is stored, and a peripherial circuit configured to store the n bit data in first memory cells, among the memory cells, store n−1 bit data in the rest of second memory cells, and store data which is not stored in the second memory cells in at least one of the dummy memory cells, among the dummy memory cells. | ||
| 申请公布号 | US9412441(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201614987239 | 申请日期 | 2016.01.04 |
| 申请人 | SK HYNIX INC. | 发明人 | Lee Hee Youl |
| 分类号 | G11C11/34;G11C11/56;G11C16/04;G11C7/14;G11C16/10;G11C16/34 | 主分类号 | G11C11/34 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor memory device, comprising: a cell string including dummy memory cells and a plurality of memory cells in which n bit data is stored; and a peripheral circuit configured to store the n bit data in first memory cells, among the memory cells, store n−1 bit data in at least one of second memory cells, and store data which is not stored in the second memory cells in at least one of the dummy memory cells, among the dummy memory cells. | ||
| 地址 | Icheon-Si, Gyeonggi-Do KR | ||