| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a configuration that can sufficiently reduce parasitic capacitance between wirings.SOLUTION: In a thin-film transistor of a bottom gate structure using a lamination of a first layer obtained by oxidizing a part or all of a metal thin-film, and an oxide semiconductor layer, an oxide insulating layer serving as a channel protection layer being in contact with a part of the oxide semiconductor layer overlapped with a gate electrode layer is formed. At formation of the insulating layer, the oxide insulating layer covering a peripheral edge part (including a lateral face) of the lamination of the oxide semiconductor layer is formed.SELECTED DRAWING: Figure 1 |
