Method of forming a transistor and structure therefor

摘要

In one embodiment, a semiconductor device is formed to include a gate structure extending into a semiconductor material that is underlying a first region of semiconductor material. The gate structure includes a conductor and also a gate insulator that has a first portion positioned between the gate conductor and a first portion of the semiconductor material that underlies the gate conductor. The first portion of the semiconductor material is configured to form a channel region of the transistor which underlies the gate conductor. The gate structure may also include a shield conductor overlying the gate conductor and having a shield insulator between the shield conductor and the gate conductor. The shield insulator may also have a second portion positioned between the shield conductor and a second portion of the gate insulator and a third portion overlying the shield conductor.

主权项

1. A transistor comprising:
a semiconductor substrate of a first conductivity type, the semiconductor substrate having a first surface and a second surface; a first semiconductor region having a second conductivity type on the first surface of the semiconductor substrate; a second semiconductor region formed within the first semiconductor region wherein a portion of the first semiconductor region underlies the second semiconductor region, the second semiconductor region having the first conductivity type; a gate structure formed in an opening that extends from the second semiconductor region into the first semiconductor region; a gate conductor of the gate structure formed within the opening and overlying a first portion of the first semiconductor region; a source region adjacent the gate conductor and spaced laterally from the gate conductor; a gate insulator between the gate conductor and the first portion of the first semiconductor region and between the source region and the gate conductor wherein a channel region of the transistor is in the first portion of the first semiconductor region so that current flows laterally between the source region and under the gate structure; a shield conductor overlying the gate conductor; and a shield insulator between the gate conductor and the shield conductor.