Complementary metal-oxide silicon having silicon and silicon germanium channels

摘要

A silicon germanium on insulator (SGOI) wafer having nFET and pFET regions is accessed, the SGOI wafer having a silicon germanium (SiGe) layer having a first germanium (Ge) concentration, and a first oxide layer over nFET and pFET and removing the first oxide layer over the pFET. Then, increasing the first Ge concentration in the SiGe layer in the pFET to a second Ge concentration and removing the first oxide layer over the nFET. Then, recessing the SiGe layer of the first Ge concentration in the nFET so that the SiGe layer is in plane with the SiGe layer in the pFET of the second Ge concentration. Then, growing a silicon (Si) layer over the SGOI in the nFET and a SiGe layer of a third concentration in the pFET, where the SiGe layer of a third concentration is in plane with the grown nFET Si layer.

主权项

1. A system comprising:
a fabrication apparatus; a fabrication controller communicatively coupled to the fabrication apparatus, wherein the fabrication controller is configured to cause the fabrication apparatus to:
receive a silicon germanium on insulator (SGOI) wafer having nFET and pFET regions;grow a silicon (Si) layer over the nFET region in response to the fabrication apparatus receiving the SGOI wafer;deposit a second oxide mask over the nFET and pFET regions in response to the fabrication apparatus growing the Si layer over the nFET region;remove the second oxide mask layer over the pFET region in response to the fabrication apparatus depositing a second oxide mask over the nFET and pFET regions;grow a second SiGe layer over the pFET region in response to the fabrication apparatus removing the second oxide mask layer over the pFET region;remove the second oxide mask over the nFET region in response to the fabrication apparatus growing the second SiGe layer over the pFET region.