发明名称 Eliminating or reducing programming errors when programming flash memory cells
摘要 Mis-programming of MSB data in flash memory is avoided by maintaining a copy of LSB page data that has been written to flash memory and using the copy rather than the LSB page data read out of the flash cells in conjunction with the MSB values to determine the proper reference voltage ranges to be programmed into the corresponding flash cells. Because the copy is free of errors, using the copy in conjunction with the MSB values to determine the proper reference voltage ranges for the flash cells ensures that mis-programming of the reference voltage ranges will not occur.
申请公布号 US9477423(B2) 申请公布日期 2016.10.25
申请号 US201314094900 申请日期 2013.12.03
申请人 Seagate Technology LLC 发明人 Cai Yu;Wu Yunxiang;Chen Zhengang;Haratsch Erich
分类号 G06F3/06;G11C11/56 主分类号 G06F3/06
代理机构 Smith Tempel Blaha LLC 代理人 Blaha Robert A.;Smith Tempel Blaha LLC
主权项 1. A data storage system comprising: a host system, the host system including at least one host processor that controls operations of the host system and a host memory device that stores data and computer instructions that are used by the host processor; and a solid state drive (SSD) device interfaced with the host system, the SSD device including an SSD controller and at least one nonvolatile memory (NVM), the NVM including at least a first flash memory having a plurality of flash cells for storing data, the first flash memory including reference voltage determination logic, the SSD controller including at least one SSD processor and at least one buffer, the SSD controller receiving write data from the host system to be programmed into flash cells of the NVM, the SSD controller buffering the write data in the buffer prior to programming the write data into the flash cells, the buffered write data comprising at least a first most significant bit (MSB) page of data and at least a first least significant bit (LSB) page of data, the SSD controller sending the first LSB page of data to the first flash memory and maintaining a copy of the first LSB page of data in a temporary memory, and wherein subsequent to sending the first LSB page of data to the first flash memory the SSD controller sends the copy of the first LSB page of data and sends the first MSB page of data to the first flash memory, and wherein the reference voltage determination logic uses the copy of the first LSB page of data and the first MSB page of data to determine reference voltage ranges to be programmed into a first MSB page of the flash cells of the first flash memory.
地址 Cupertino CA US