发明名称 |
BI-AXIAL TENSILE STRAINED GE CHANNEL FOR CMOS |
摘要 |
An apparatus comprising a complimentary metal oxide semiconductor (CMOS) inverter including an n-channel metal oxide semiconductor field effect transistor (MOSFET); and a p-channel MOSFET, wherein a material of a channel in the n-channel MOSFET and a material of a channel in the p-channel MOSFET is subject to a bi-axial tensile strain. A method including forming an n-channel metal oxide semiconductor field effect transistor (MOSFET); forming a p-channel MOSFET; and connecting the gate electrodes and the drain regions of the n-channel MOSFET and the p-channel MOSFET, wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is subject to a bi-axial tensile strain. |
申请公布号 |
EP3087602(A1) |
申请公布日期 |
2016.11.02 |
申请号 |
EP20130900530 |
申请日期 |
2013.12.27 |
申请人 |
INTEL CORPORATION |
发明人 |
MAJHI, PRASHANT;MUKHERJEE, NILOY;PILLARISETTY, RAVI;RACHMADY, WILLY;CHAU, ROBERT, S. |
分类号 |
H01L27/092;H01L21/8238;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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