Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

摘要

Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

主权项

1. A spin torque transfer memory (STTM) array, comprising:
a plurality of load line lower portions in a dielectric layer disposed above a substrate, each of the load line lower portions coupled to a corresponding transistor contact; a first plurality of STTM devices, one device for each of alternating ones of the plurality of load line lower portions; a plurality of load line upper portions, one upper portion for each of the remaining ones of the plurality of load line lower portions, each load line upper portion adjacent a device of the first plurality of STTM devices; and a second plurality of STTM devices, one device for each of the load line upper portions, the devices of the second plurality of STTM devices non-co-planar with the devices of the first plurality of STTM devices, wherein each of the first plurality of STTM devices and the second plurality of STTM devices includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.