发明名称 READ DISTURB DETECTION IN OPEN BLOCKS
摘要 A storage device with a memory may include read disturb detection for open blocks. An open or partially programmed block may develop read disturb errors from reading of the programmed portion of the open block. The detection of any read disturb effects may be necessary for continued programming of the open block and may include verifying that wordlines in the unprogrammed portion of the open block are in the erase state. A modified erase verify operation for the open block is used in which programmed wordlines are subject to a higher erase verify read voltage, while the unprogrammed wordlines are subject to an erase verify bias voltage.
申请公布号 US2016343449(A1) 申请公布日期 2016.11.24
申请号 US201514717582 申请日期 2015.05.20
申请人 SanDisk Technologies Inc. 发明人 Lee Aaron;Zhou Zhenming;Kochar Mrinal;Hsu Cynthia Hua-Ling
分类号 G11C16/34;G11C16/16;G11C16/26;G11C11/56 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method for programming a block comprising: programming the block such that some wordlines are programmed and some wordlines are not programmed; receiving a request to continue programming of the wordlines that are not programmed; and performing a block level erase verify operation on all of the wordlines, wherein the erase verify operation biases the programmed wordlines differently from the not programmed wordlines.
地址 Plano TX US