Method of forming a semiconductor structure

摘要

A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

主权项

1. A method of forming a semiconductor structure, comprising:
providing a photoresist layer having a plurality of mandrel patterns; forming a plurality of first mandrels on a substrate through the photoresist layer; performing at least one sidewall image transferring (SIT) process; forming a plurality of third mandrels on the substrate through the SIT process; forming a masking layer on the third mandrels and the substrate; removing the masking layer on at least a portion of the third mandrels; and forming a plurality of fins in the substrate through the masking layer and the third mandrels, wherein each of the fins has a predetermined critical dimension, at least one of the fins has a different critical dimension from others and each of the mandrel patterns has a critical dimension being 5-8 times greater than the predetermined critical dimension.