| 摘要 |
<p>A method for forming a passivation layer of a silicon solar cell is provided to improve defects of a silicon substrate by adding TLC(Trans 1, 2-Dichloroethylene; C2H2Cl2) in an in-situ manner in a process for forming a silicon oxide layer for passivation of the solar cell. A preparation process is performed to prepare a first conductive type silicon substrate(201). A second conductive type emitter layer(202) is formed on an upper part of the silicon substrate. The second conductive type of the emitter layer is opposite to the first conductive type. A passivation layer(203) is formed on an upper part of the emitter layer by using a thermal oxidation method. In the thermal oxidation process, the TLC is added by an in-situ manner. The passivation layer is formed with a silicon oxide layer.</p> |
