| 摘要 |
<p>A method for forming a flash memory device is provided to prevent deterioration of electrical characteristics of the flash memory device by suppressing damage of an active region. A tunnel insulating layer(202), a first conductive layer(204), and a dielectric layer(206) are formed on a semiconductor substrate(200). A dielectric layer contact hole(212a) is formed on a part of the dielectric layer. A spacer is formed on a spacer of the dielectric layer contact hole. A second conductive layer(214) and a hard mask pattern are formed on an upper part of the dielectric layer in order to fill up the dielectric layer contact hole. A plurality of gate lines(WL,SL) are formed by patterning the second conductive layer, the dielectric layer, the first conductive layer, and the tunnel insulating layer according to the hard mask pattern.</p> |
