| 摘要 |
<p>A method for forming a pattern of a photomask is provided to improve a profile of a pattern by preventing a shadowing effect due to a step of a photomask pattern. A reflective layer(101) and a first buffer layer(102) are formed on a substrate(100). The first buffer is patterned to expose a partial region of the reflective layer. An absorbing layer(104) is formed in a space between the patterned first buffer layers. A second buffer layer(105) is formed on the entire structure including the absorbing layer. The reflective layer is formed with a Mo/Si layer or Mo/Be layer. The reflective layer is formed with a multilayer structure of the Mo/Si layer or a multilayer structure of the Mo/Be layer.</p> |
