| 摘要 |
PURPOSE:To isolate a plurality of semiconductor devices easily without using photolithography technique by utilizing a fact that a nonsingular crystal semiconductor can be treated completely as an insulator if the thickness of the nonsingular crystal semiconductor extends over decuple as large as that of a semiconductor film formed when a vertical channel type and laminated type complementary insulated gate type semiconductor device is shaped on an insulating substrate. CONSTITUTION:A first conductive film 2 for a lower side electrode consisting of an oxide, TiSi2, etc. is applied on an insulating substrate 1 made of glass, etc., and openings in desired number are bored through selective etching. A thick P type amorphous Si film 3 is laminated on the whole surface while burying these openings, only a section on a P channel type element forming region 10 is coated with a photo-resist film 71, and the exposed section of the film 3 is removed through etching. A thick N type amorphous Si film 3 is applied on the whole surface, the film 71 is removed together with the film 3' on the film 71, and a second semiconductor or an insulator 4 is applied on the connected and flattened films 3 and 3'. P type and N type semiconductor layers 5 and 5' each opposed to the films 3 and 3' are deposited on the insulator 4. |
