发明名称 |
Method of manufacturing semiconductor devices |
摘要 |
A method of manufacturing a semiconductor device including forming a dummy gate electrode which is divided into first and second areas, selectively implanting N-type ions and P-type ions into the first and second areas of the dummy gate electrode respectively and then implanting impurity ions into a boundary region between the first area and second area of the dummy gate electrode.
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申请公布号 |
US7556998(B2) |
申请公布日期 |
2009.07.07 |
申请号 |
US20050319489 |
申请日期 |
2005.12.29 |
申请人 |
DONGBU ELECTRONICS, CO., LTD. |
发明人 |
PARK HYUK;KEUM DONG YEOL |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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