| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to adjust an EFH(Effective Field oxide Height) in a desired U-shaped pattern in a post process by performing a simple process using a dual liner insulating layer. An etch process is performed by using an isolation mask(106). A trench(108) is formed in an isolation region of a semiconductor substrate(100). A first liner nitride layer(110) is formed along a surface of the trench by using a silicon source gas. A part of the trench is filled with the first liner insulating layer. A second liner insulating layer(112) is formed on the first liner insulating layer by using the silicon source gas. The amount of silicon source gas used for the second liner insulating layer is smaller than the amount of silicon source gas used for the first liner insulating layer.
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