| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING WELL- ADHESION INSULATING FILMS |
| 摘要 |
PURPOSE: A manufacturing method for a semiconductor device is provided to improve adhesion between the first and the second insulating film to suppress a leakage current and a dielectric constant of the first insulating film. CONSTITUTION: A method for manufacturing a semiconductor device having a multi-layer insulating film includes following steps. A first insulating film(3) as one layer of the multi-layer insulating film is formed. The first insulating film is treated by plasma in an ambient of a gas mixture of He and Ar containing 5 to 31% of Ar. A second insulating film(4), which is different from the first insulating film, is formed as another layer of the multi-layer film, on the first insulating film after the plasma treatment.
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| 申请公布号 |
KR20040108598(A) |
申请公布日期 |
2004.12.24 |
| 申请号 |
KR20040040591 |
申请日期 |
2004.06.04 |
| 申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
YONEDA, KATSUMI;YOSHIE, TORU |
| 分类号 |
H01L21/31;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):H01L21/31;H01L21/320 |
主分类号 |
H01L21/31 |
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