| 摘要 |
A method for manufacturing a semiconductor device is provided to minimize reduction of a contact area of a capacitor line and a bitline and reduce contact resistance by forming a knot on either one surface of both sides of a gate line. An isolation layer is formed in a semiconductor substrate to define an active region(31) of a bar type extending in the first direction. Ions for controlling a threshold voltage are implanted into the semiconductor substrate. A gate line(33) is formed on the semiconductor substrate, extending in a direction vertical to the active region. In forming the gate line, a knot(39) is formed in either one part of both sides of the gate line.
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