THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

A TFT(thin film transistor) substrate is provided to prevent a lower interconnection from being damaged in an etch process and prevent foreign substances from being caught in a probe in a gross test by forming a pixel electrode composed of a dual layer of an IZO(indium tin oxide) layer and an ITO(indium zinc oxide) layer. An insulation substrate(10) is prepared. The first signal line is formed on the insulation substrate. The first insulation layer is formed on the first signal line. The second signal line crosses the first signal line, formed on the first insulation layer. A TFT is electrically connected to the first and second signal lines. The second insulation layer is formed on the TFT, having the first contact hole(76) exposing a predetermined electrode of the TFT. A pixel electrode(82) is formed on the second insulation layer, connected to the predetermined electrode of the TFT through the first contact hole and made of a dual layer composed of an IZO layer(821,861,881) and an ITO layer(822,862,882).