发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER |
摘要 |
<p>A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer. An epitaxial layer 17 is grown in a trench 16 of a semiconductor wafer 10 having a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150°C by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layer 17 in the trench 16.</p> |
申请公布号 |
EP1734565(A1) |
申请公布日期 |
2006.12.20 |
申请号 |
EP20050727725 |
申请日期 |
2005.03.31 |
申请人 |
SUMCO CORPORATION;DENSO CORPORATION |
发明人 |
NOGAMI, S.;HORIOKA, Y.;YAMAUCHI, S. |
分类号 |
H01L21/205;H01L21/306;H01L21/02;H01L21/20;H01L21/22;H01L29/06 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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