发明名称 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
摘要 A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.
申请公布号 US2007218643(A1) 申请公布日期 2007.09.20
申请号 US20070798085 申请日期 2007.05.10
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKAGAWA HIDEO;SASAGO MASARU
分类号 C08L101/00;H01L21/76;C08K3/36;C08L83/04;H01L21/312;H01L21/316;H01L21/768;H01L23/522 主分类号 C08L101/00
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