| 摘要 |
An etching method for a next generation semiconductor process is provided to improve contact etching process performance about etch speed, etch profile, selection and top/ bottom CD in a next generation semiconductor process so that the etching limit of a contact CD which becomes gradually smaller and deeper is overcome. An etch process for a semiconductor is progressed as a condition of a fixed process parameter. An etching method for a next generation semiconductor process comprises: a step for defining the condition of the fixed process parameter as a new condition having a specified range; and a step for gradually changing(21,22,23) a corresponding process parameter according to time in range of the defined condition.
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