发明名称 MEMORY TILE ACCESS AND SELECTION PATTERNS
摘要 In one embodiment, an apparatus, such as a memory device, is disclosed. The apparatus includes multiple memory tiles and selection circuitry. Each memory tile has an array of storage components at intersections of a plurality of digit line conductors and a plurality of access line conductors. The selection circuitry includes line drivers that select a storage component of a memory tile based on a corresponding digit line conductor and a corresponding access line conductor to the storage component. The selection circuitry may select two or more storage components of a memory tile in a consecutive manner before selecting the storage components of a different memory tile.
申请公布号 EP3011566(A4) 申请公布日期 2016.07.06
申请号 EP20140813236 申请日期 2014.06.05
申请人 MICRON TECHNOLOGY, INC. 发明人 CASTRO, HERNAN, A.;TEDROW, KERRY, DEAN;WU, JACK, CHINHO
分类号 G11C7/00;G11C7/10;G11C13/00 主分类号 G11C7/00
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