发明名称 CONTROLLED FABRICATION OF NANOPORES IN NANOMETRIC SEMICONDUCTOR MATERIALS
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a nanopore in a nanometric material.SOLUTION: A nanopore nucleation site is formed at a location that is interior to lateral edges of a nanometric material 16 by directing a first energetic beam, selected from the group of ion beams and neutral atom beams, at the interior location for a first time duration that imposes a first beam dose which causes removal of no more than five interior atoms from the interior location to produce, at the interior location, the nanopore nucleation site having a plurality of edge atoms. A nanopore 70 is then formed at the nanopore nucleation site by directing a second energetic beam, selected from the group consisting of electron beams, ion beams, and neutral atom beams, at the nanopore nucleation site with beam energy that removes the edge atoms at the nanopore nucleation site but does not remove bulk atoms from the nanometric material.SELECTED DRAWING: Figure 5A
申请公布号 JP2016165794(A) 申请公布日期 2016.09.15
申请号 JP20160046487 申请日期 2016.03.10
申请人 PRESIDENT & FELLOWS OF HARVARD COLLEGE 发明人 CHRISTOPHER J RUSSO;JENE A GOLOVCHENKO;BRANTON DANIEL
分类号 B82Y30/00;C01B31/02 主分类号 B82Y30/00
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