Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer

摘要

One illustrative method disclosed herein includes, among other things, forming an opening in at least one layer of insulating material so as to thereby expose at least a portion of a conductive contact, performing a selective metal silicide formation process to selectively form a metal silicide layer in the opening and on the conductive contact, depositing at least one conductive material above the selectively formed metal silicide layer so as to over-fill the opening, and performing at least one planarization process so as to remove excess materials and thereby define a conductive via that is positioned in the opening and conductively coupled to the selectively formed metal silicide layer and to the conductive contact.

主权项

1. A method, comprising:
forming an opening in at least one layer of insulating material positioned above a conductive contact that is conductively coupled to a transistor device so as to thereby expose at least a portion of said conductive contact; performing a selective metal silicide formation process to selectively form a metal silicide layer in said opening and on said conductive contact, wherein performing said selective metal silicide formation process comprises generating a plasma environment at a temperature of 400° C. or less and introducing a silicon-containing precursor gas into said plasma environment; depositing at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening; and performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said selectively formed metal silicide layer and to said conductive contact.