| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a transistor including an oxide semiconductor, whose variation in electric characteristics is suppressed and whose reliability is improved.SOLUTION: A semiconductor device includes a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film include a region overlapping with each other. The oxide semiconductor film is provided between the first insulating film and the second insulating film and includes a region in contact with the pair of electrodes. The first insulating film is provided between the gate electrode and the oxide semiconductor film. At least one of the first insulating film and the second insulating film includes a region containing silicon and oxygen, in which the etching speed when etching is carried out using fluorinated acid is more than 8 nm per minute.SELECTED DRAWING: Figure 1 |
