发明名称 Sense amplifiers and semiconductor memory devices for reducing power consumption and methods for operating the same
摘要 In a sense amplifier, a current amplifier outputs a first and a second voltage signal in response to a first control signal. The first and second voltage signals are output based on a detected current difference between a pair of input/output lines. A voltage amplifier generates a third and a fourth voltage signal based on a detected voltage difference between the first and second voltage signals. The third and a fourth voltage signals are generated in response to a second control signal. A first latch circuit latches the third and fourth voltage signals, and outputs a first output signal in response to the second control signal. A second latch circuit latches the first and second voltage signals and outputs a second output signal in response to a third control signal. An output circuit performs a logic operation on the first output signal and the second output signal, and outputs a result of the logic operation as a resultant signal.
申请公布号 US7573756(B2) 申请公布日期 2009.08.11
申请号 US20070882738 申请日期 2007.08.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO SEONG YOUNG
分类号 G11C7/00 主分类号 G11C7/00
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