| 摘要 |
The invention relates to a method for producing textures or polishes on the surface of monocrystalline silicon wafers by means of anisotropic etching processes. The problem addressed by the invention is that of developing a method for producing textures or polishes on the surface of monocrystalline silicon wafers in which economical, easily accessible, non-toxic raw materials can be used, which can be performed near room temperature in an energy-saving manner, in which the cleaning and the texturing or polishing of the wafer surface occur simultaneously, in which less toxic exhaust gases are released and smaller amounts of waste water are produced, by means of which a higher removal rate than with the use of alkaline solutions can be achieved such that in-line processing is possible, and which produces comparable textures on both SiC-slurry-sawed silicon wafers and diamond-wire-sawed silicon wafers. Surprisingly, it was found that pyramids having a square base are produced when aqueous mixtures of hydrofluoric acid (HF), hydrochloric acid (HCl), and an added oxidant or aqueous solutions of hydrofluoric acid (HF) and fed chlorine (Cl2) are used as etching solutions in the treatment of monocrystalline silicon (100) wafers. Ammonium peroxodisulfate ((NH4)2S2O8), sodium peroxodisulfate (Na2S2O8), hydrogen peroxide (H2O2), potassium permanganate (KMnO4), ozone (O3), and nitric acid (HNO3) were preferably used as oxidants. |
