发明名称 METHOD OF MACHINING COMPOUND SEMICONDUCTOR SUBSTRATE AND COMPOUND SEMICONDUCTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of machining a compound semiconductor substrate reducing the amount of warpage of the substrate. <P>SOLUTION: The method of machining the compound semiconductor substrate includes: a step for applying a back surface 3 at a side opposite to a polishing surface 2 of the compound semiconductor substrate 1 to a polishing plate 11 having a circular plane shape; a step for rotating the polishing plate 11; and a step for polishing the polishing surface 2 in contact with a polishing surface plate. In the application step, a projecting part 4 on the polishing surface 2 is disposed at the position of the polishing plate 11 to which a relatively large polishing load is applied in a polishing step, namely at the center side and the outermost periphery side in the radial direction of the polishing plate 11. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182126(A) 申请公布日期 2009.08.13
申请号 JP20080019325 申请日期 2008.01.30
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAYAMA MASAHIRO;HIGUCHI YASUAKI;NISHIURA TAKAYUKI
分类号 H01L21/304;B24B37/04;B24B37/30 主分类号 H01L21/304
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