发明名称 |
METHOD OF MACHINING COMPOUND SEMICONDUCTOR SUBSTRATE AND COMPOUND SEMICONDUCTOR SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of machining a compound semiconductor substrate reducing the amount of warpage of the substrate. <P>SOLUTION: The method of machining the compound semiconductor substrate includes: a step for applying a back surface 3 at a side opposite to a polishing surface 2 of the compound semiconductor substrate 1 to a polishing plate 11 having a circular plane shape; a step for rotating the polishing plate 11; and a step for polishing the polishing surface 2 in contact with a polishing surface plate. In the application step, a projecting part 4 on the polishing surface 2 is disposed at the position of the polishing plate 11 to which a relatively large polishing load is applied in a polishing step, namely at the center side and the outermost periphery side in the radial direction of the polishing plate 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009182126(A) |
申请公布日期 |
2009.08.13 |
申请号 |
JP20080019325 |
申请日期 |
2008.01.30 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAKAYAMA MASAHIRO;HIGUCHI YASUAKI;NISHIURA TAKAYUKI |
分类号 |
H01L21/304;B24B37/04;B24B37/30 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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