| 摘要 |
A void-collection section is provided on a GaAs FET chip at a location that avoids a heat-generating region of the chip. Pressure is applied to the rear surface of the substrate corresponding to the heat-generating region of the chip, this causing the removal of a void from immediately under the heat-generating section, and the capture of the void by the void-collection section, thereby suppressing the localized rise in temperature of the chip caused by the existence of the void.
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