Method for improving characteristic of dielectric material

摘要

A method for improving a characteristic of a dielectric material. A methylsilsesquioxane having a low dielectric constant is used as a dielectric material. A methylsilsesquioxane film is formed on a substrate. A baking process is performed on the methylsilsesquioxane film, and then a curing process is performed on the methylsilsesquioxane film. Next, a hydrogen plasma treatment is performed on the surface of the methylsilsesquioxane film to prevent the methylsilsesquioxane film from being damaged by oxygen plasma for removing photoresist layer, so that the characteristically low dielectric constant of the methylsilsesquioxane film is maintained.