发明名称 Cdte single crystal and cdte polycrystal, and method for preparation thereof
摘要 A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0x10<SUP>9 </SUP>Omega.cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.
申请公布号 US2005170649(A1) 申请公布日期 2005.08.04
申请号 US20040505588 申请日期 2004.08.25
申请人 HIRANO RYUICHI 发明人 HIRANO RYUICHI
分类号 C30B11/00;C30B11/12;C30B15/00;C30B27/02;C30B29/48;(IPC1-7):H01L21/302;H01L21/461 主分类号 C30B11/00
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