| 摘要 |
PROBLEM TO BE SOLVED: To provide an organometallic compound used for forming an iridium-containing membrane by a CVD method, having a low melting point, excellent in vaporization characteristic and also having a low membrane-forming temperature on a substrate. SOLUTION: This organoiridium compound is produced by performing the reaction of an iridium compound, a cyclohexadiene derivative and a cyclopentadiene derivative. Also, the organoiridium compound is produced by performing the reaction of the iridium compound, a butadiene derivative and the cyclopentadiene derivative. COPYRIGHT: (C)2005,JPO&NCIPI
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