发明名称 |
Method for Manufacturing Semiconductor Device |
摘要 |
In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer. |
申请公布号 |
US2008070393(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070839349 |
申请日期 |
2007.08.15 |
申请人 |
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发明人 |
MIYAIRI HIDEKAZU;JINBO YASUHIRO;HIGA EIJI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/311;H01L21/3205;H01L21/44 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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