发明名称 Method for Manufacturing Semiconductor Device
摘要 In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.
申请公布号 US2008070393(A1) 申请公布日期 2008.03.20
申请号 US20070839349 申请日期 2007.08.15
申请人 发明人 MIYAIRI HIDEKAZU;JINBO YASUHIRO;HIGA EIJI;YAMAZAKI SHUNPEI
分类号 H01L21/311;H01L21/3205;H01L21/44 主分类号 H01L21/311
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