| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device, capable of improving reliability of a metal cap layer and productivity. SOLUTION: A ZrB target is sputtered with an Ar gas, and a common first metal cap layer 16 principally containing ZrBx (x=0.5-4.0) is laminated on a second interlayer dielectric 11 and a first wiring 13. Also, a ZrB target is sputtered with an Ar gas, and a common second metal cap layer 37 principally containing ZrBx (x=0.5-4.0) is laminated on a hard mask 32 and a second wiring 34. COPYRIGHT: (C)2008,JPO&INPIT |
