发明名称 |
EFUSE CONTAINING SIGE STACK |
摘要 |
An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.
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申请公布号 |
US2008169529(A1) |
申请公布日期 |
2008.07.17 |
申请号 |
US20070622616 |
申请日期 |
2007.01.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM DEOK-KEE;CHIDAMBARRAO DURESETI;HENSON WILLIAM K.;KOTHANDARAMAN CHANDRASEKHARAN |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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