FLASH MEMORY DEVICE CAPABLE OF IMPROVING PROGRAM PERFORMANCE AND PROGRAM METHOD THEREOF

摘要

A flash memory device is provided to expand program execution time according to the voltage drop of the bit line by controlling the program execute time controller. The memory cell array(110) comprises a plurality of memory cells arranged with word lines in the cross-domain of the bit lines. A write circuit(150) operates a bit line connected to the memory cell selected according to program data of data input circuit(170). A bulk voltage supply circuit(160) supplies the bulk voltage to the bulk of the memory cell array. The control logic(180) controls a program operation of the flash memory device(100) in response to the program instruction(PGM cmd).