摘要 |
A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure may be provided adjacent the digit line, and a bit line may be provided on the magnetic tunnel junction structure such that the magnetic tunnel junction structure is between the bit line and the digit line. In addition, a second magnetic layer may be provided on the bit line.
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